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STD3NK60ZD N-channel 600 V, 3.3 , 2.4 A, DPAK SuperFREDMeshTM Power MOSFET Features Type STD3NK60ZD VDSS 600 V RDS(on) max < 3.6 ID 2.4 A 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Fast internal recovery diode DPAK 3 1 Application Switching applications Figure 1. Internal schematic diagram Description The SuperFREDMeshTM series associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the "FDmeshTM" advanced technology. Table 1. Device summary Marking 3NK60ZD Package DPAK Packaging Tape and reel Order code STD3NK60ZD September 2008 Rev 2 1/14 www.st.com 14 Contents STD3NK60ZD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STD3NK60ZD Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 2 5C Derating factor Value 600 30 2.4 1.51 9.6 45 0.36 15 -55 to 150 Unit V V A A A W W/C V/ns C PTOT dv/dt (2) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD 2.4 A, di/dt 600 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Value 100 50 300 Unit C/W C/W C Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose Table 4. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max value 2.4 150 Unit A mJ 3/14 Electrical characteristics STD3NK60ZD 2 Electrical characteristics (Tcase =25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 600 1 50 10 3 3.75 3.3 4.5 3.6 Typ. Max. Unit V A A A V VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 20 V Gate threshold voltage VDS = VGS, ID = 50 A Static drain-source on resistance VGS = 10 V, ID = 1.2 A Table 6. Symbol Ciss Coss Crss Coss eq(1) Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 311 43 8 27 11.8 2.6 6.4 Max. Unit pF pF pF pF nC nC nC VDS = 25 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 400 V VDD = 400 V, ID = 2.4 A, VGS = 10 V (see Figure 16) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/14 STD3NK60ZD Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 480 V, ID = 3 A, RG = 4.7 , VGS = 10 V (see Figure 15) Min. Typ. 9 14 19 14 Max Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, VGS = 0 ISD = 2.4 A, di/dt = 100 A/s VDD = 60 V (see Figure 20) ISD = 2.4 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 20) 98 170 3.4 105 184 3.5 Test conditions Min. Typ. Max. Unit 2.4 9.6 1.6 A A V ns nC A ns nC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/14 Electrical characteristics STD3NK60ZD 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 STD3NK60ZD Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature 7/14 Electrical characteristics Figure 14. Maximum avalanche energy vs temperature STD3NK60ZD 8/14 STD3NK60ZD Test circuits 3 Test circuits Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14 Package mechanical data STD3NK60ZD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STD3NK60ZD Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 11/14 Package mechanical data STD3NK60ZD 5 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/14 STD3NK60ZD Revision history 6 Revision history Table 9. Date 24-Jul-2008 11-Sep-2008 Document revision history Revision 1 2 First release Document status changed from preliminay data to datasheet Changes 13/14 STD3NK60ZD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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